Transport mechanism of the leakage current in MIS capacitor with HfO2/SiO2 stack gate
| Autor: | Wen Zhou, Bo Gao, Sai Tallavarjula, Hongxia Liu, Aaron Zhao, Qianwei Kuang |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
business.industry Electrical engineering Hardware_PERFORMANCEANDRELIABILITY MIS capacitor law.invention Capacitor Stack (abstract data type) Hardware_GENERAL law Gate oxide Logic gate Hardware_INTEGRATEDCIRCUITS Optoelectronics Hardware_ARITHMETICANDLOGICSTRUCTURES business Metal gate Quantum tunnelling Hardware_LOGICDESIGN High-κ dielectric |
| Zdroj: | 2009 IEEE International Conference of Electron Devices and Solid-State Circuits (EDSSC). |
| Popis: | I-V characteristic of the HfO 2 /SiO 2 stack gate MIS capacitor is investigated. The gate leakage current in HfO 2 /SiO 2 stack gate MIS capacitor decreases after constant voltage stress, which is caused by electron trapping. By analyzing the experiment and calculation results, the main transport mechanisms of the gate leakage current in HfO 2 /SiO 2 stack gate is presented. The different transport mechanisms in HfO 2 gate and HfO 2 /SiO 2 stack gate are proposed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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