Preparation of Conductive Buffer Architectures Based on IBAD-TiN
| Autor: | John C. Rowley, Ludwig Schultz, B. Holzapfel, K Güth, Ruben Hühne, Thomas Thersleff, Vladimir Matias |
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| Rok vydání: | 2009 |
| Předmět: |
Materials science
Reflection high-energy electron diffraction business.industry chemistry.chemical_element Yttrium barium copper oxide Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Amorphous solid Pulsed laser deposition chemistry.chemical_compound chemistry Physical vapor deposition Optoelectronics Electrical and Electronic Engineering business Tin Ion beam-assisted deposition |
| Zdroj: | IEEE Transactions on Applied Superconductivity. 19:3447-3450 |
| ISSN: | 1558-2515 1051-8223 |
| DOI: | 10.1109/tasc.2009.2019249 |
| Popis: | Ion beam assisted deposition (IBAD) was used in combination with pulsed laser deposition to develop a conductive biaxially textured buffer architecture based on IBAD-TiN for coated conductor applications. Highly textured TiN layers were prepared on Hastelloy substrates with an amorphous Y2O3 seed layer. The cube textured nucleation layer was preserved to higher thicknesses using homoepitaxial growth. A double layer of Au and Ir was used to reduce the lattice misfit between TiN and YBCO. Finally, a 120 nm thick Nb:SrTiO3 layer was deposited to ensure the epitaxial growth of the superconducting YBCO layer at higher oxygen pressures. In-situ RHEED measurements revealed an undisturbed epitaxial growth of the complete buffer layer stack. The buffered tape was successfully used for the deposition of a 300 nm thick YBa2Cu3O7-x layer, showing an in-plane FWHM value of 7.2deg and a critical temperature T c of about 88 K. The results are promising for the development of a completely electrical conductive buffer architecture based on the IBAD approach. |
| Databáze: | OpenAIRE |
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