| Autor: |
Aneesh Nainani, Mario G. Ancona, J.B. Boos, Krishna C. Saraswat, Ze Yuan, Brian R. Bennett, J.-Y. Jason Lin |
| Rok vydání: |
2011 |
| Předmět: |
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| Zdroj: |
69th Device Research Conference. |
| DOI: |
10.1109/drc.2011.5994457 |
| Popis: |
III–V semiconductors are considered as promising candidates to replace silicon as the channel material in future technology nodes for transistors [1]. III–V n-channel MOSFETs have been extensively studied [2–4], showing high electron mobility. However, one of the most critical challenges in realizing high performance III–V MOSFETs is the difficulties in source/drain (S/D) design including parasitic resistance due to low solubility and poor activation of dopant and the “source starvation” effect due to low density of states [5–6]. Annealing of implant damage after S/D ion-implantation is also more problematic in III–V's due to the presence of 2 or more atomic species vs. group IV semiconductors (Fig.1). Use of Schottky-barrier (SB) metal S/D is a promising strategy to overcome these limitations [7]. Meanwhile, for III–V based CMOS logic, achieving a high mobility pMOSFET in a III–V channel remains a challenge. Antimony (Sb) based compound semiconductors have the highest electron and hole mobilities amongst all III–V materials. Recently, high performance strained channel InGaSb pMOSFETs [8] have been demonstrated. In this paper, we study the metal contact to antimonides compound. Good metal contact formed on p-type material and current suppression on n-type samples is attributed to the Fermi-level pinning at metal/antimonide interface and charge-neutral level being near the valence band edge. Schottky-barrier S/D p-MOSFETs is proposed and experimentally demonstrated which combines an In x Ga 1−x Sb channel for good hole transport with metal S/D for low access resistance. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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