Field effect in weakly compensated Si under condition of impurity conduction

Autor:	A. S. Vedeneev, V. V. Ryl'kov, A. G. Gaivoronskii, A. Modelli, A. G. Zhdan, Yu. Ya. Tkach
Rok vydání:	1994
Předmět:	Materials science Physics and Astronomy (miscellaneous) Condensed matter physics Impurity Electrical resistivity and conductivity Doping Field effect Conductance Field-effect transistor Activation energy Thermal conduction
Zdroj:	Applied Physics Letters. 64:2566-2568
ISSN:	1077-3118 0003-6951
Popis:	Peculiarities of electron transport in a thin (0.5 μm) Si:B layer of p‐channel depletion‐type metal‐oxide‐semiconductor transistors with a high doping level (NA≂1018 cm−3) and a low compensation degree (K≂10−3) are described. These peculiarities manifest themselves in the helium temperature range as an increase and successive saturation of the impurity‐band conductance when the negative charge near the Si surface is increased by applying positive gate voltages. A model is suggested which explains the conduction enhancement as a result of the appearance of an additional channel for hopping in the transition region which divides completely ionized and neutral acceptors. The estimated hopping activation energy is in agreement with the experimental results.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bec89874c96f26c9c0cef427ca5c0f3e https://doi.org/10.1063/1.111575 Zobrazit plný text záznamu