High aspect (>20) etching with reactive gas cluster injection

Autor:	Toshio Seki, Hiroki Yamamoto, Kunihiko Koike, Takaaki Aoki, Jiro Matsuo
Rok vydání:	2022
Předmět:	Physics and Astronomy (miscellaneous) General Engineering General Physics and Astronomy
Zdroj:	Japanese Journal of Applied Physics. 61:SI1007
ISSN:	1347-4065 0021-4922
DOI:	10.35848/1347-4065/ac6565
Popis:	The reactive gas cluster injection process is an etching method that uses a neutral cluster beam without plasma. This process can avoid damage caused by energetic ion irradiation and vacuum UV light from the plasma. The characteristics of an etching by ClF3–Ar gas cluster injection were investigated at various target distances, pattern widths, and sample temperatures. As a result, the relationship between the etching conditions and the aspect ratio was clarified, and an equation that can predict the maximum limit of the aspect ratio was derived from the ClF3 flux and pattern widths. Then high aspect etching with an aspect ratio exceeding 20 is realized. And also, the 3D lever structure of 6 layers can be fabricated by double-angled etching with neutral cluster injection at the condition for high aspect etching.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bec4e787845ecf89637b4e3ef573e9c8 https://doi.org/10.35848/1347-4065/ac6565 Zobrazit plný text záznamu