Heavily‐dopedn‐type InP and InGaAs grown by metalorganic chemical vapor deposition using tetraethyltin

Autor:	C. J. Pinzone, N. T. Ha, N. D. Gerrard, R. D. Dupuis, H. S. Luftman
Rok vydání:	1990
Předmět:	Secondary ion mass spectrometry Tetraethyltin chemistry.chemical_compound Dopant chemistry Atmospheric pressure Hall effect Inorganic chemistry Doping Analytical chemistry General Physics and Astronomy Chemical vapor deposition Epitaxy
Zdroj:	Journal of Applied Physics. 67:6823-6829
ISSN:	1089-7550 0021-8979
Popis:	Heavily doped n‐type InP and InGaAs epitaxial layers have been grown by metalorganic chemical vapor deposition at atmospheric pressure using tetraethyltin (TESn) as a dopant source. Sn‐doped InP and InGaAs layers have been grown with doping concentrations as high as n300K∼3.3×1019 cm−3 and n300 K∼6.1×1019 cm−3, respectively. Hall measurements of Nd‐Na at 300 and 77 K indicate that the Sn is uncompensated up to these concentrations. Analysis of the Sn concentration in InP:Sn and InGaAs:Sn layers using secondary ion mass spectrometry, shows that all of the Sn is ionized in InP and InGaAs until a limit is reached that corresponds to the electrical limits. SIMS profiles also show that the use of TESn for the growth n+ InP and InGaAs layers results in no severe memory effects and that abrupt Sn doping profiles can be achieved.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bec4dab82079caaa88cfc6ca4757ee98 https://doi.org/10.1063/1.345072 Zobrazit plný text záznamu