| Autor: |
H.-L. Chou, Y.-H. Lee, C.-Y. Yang, Chen Chia-Chiang, Jesse Wang, P.-C. Su, H.-T. Lu, David Ho, Zhe-Yi Wang, Yu-Hui Huang, Yu-Chang Jong |
| Rok vydání: |
2017 |
| Předmět: |
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| Zdroj: |
2017 IEEE International Reliability Physics Symposium (IRPS). |
| DOI: |
10.1109/irps.2017.7936261 |
| Popis: |
With continuous improvement of the figure-of-merit (RdS on vs. BVd ss ) in high-voltage device, HCI induced device burnout emerged. In this work, we showed that the mechanism of burnout is due to HCI assisted TDDB (HA-TDDB) as evident from various Vg and temperature dependence characterization. We demonstrated that hot-hole assisted TDDB can be initiated by a 3-stage hot-hole induced leakage current (HHLC), i.e. interface traps generation at initial stage, oxide traps at 2nd stage and oxide breakdown after percolation path formation in last stage, which is different compared to hot-electron assisted TDDB. Furthermore, oblique percolation path accounted for the large Weibull slope. Negligible area-dependence at high Vd bias is ascribed to self-heating effect which mitigates impact-ionization. TCAD simulation and junction temperature at different Vd bias were performed to support the hypotheses. After thoroughly understanding the mechanism, HA-TDDB lifetime was significantly improved via process and design rule optimization. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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