Design and fabrication of high-performance polycrystalline silicon thin-film transistor circuits on flexible steel foils
| Autor: | Miltiadis K. Hatalis, Themis Afentakis, John W. Hartzell, Apostolos T. Voutsas |
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| Rok vydání: | 2006 |
| Předmět: |
Fabrication
Materials science business.industry Transistor Electrical engineering Hardware_PERFORMANCEANDRELIABILITY engineering.material Flexible electronics Electronic Optical and Magnetic Materials law.invention Polycrystalline silicon CMOS law Thin-film transistor Hardware_INTEGRATEDCIRCUITS engineering Optoelectronics Field-effect transistor Electrical and Electronic Engineering business Electronic circuit |
| Zdroj: | IEEE Transactions on Electron Devices. 53:815-822 |
| ISSN: | 0018-9383 |
| Popis: | This paper discusses in detail the design and fabrication process for the realization of high-performance polycrystalline silicon thin-film transistors and digital CMOS circuitry on thin flexible stainless steel foils. A comprehensive approach to substrate preparation is first presented. For transistor fabrication, distinct processing approaches are examined, such as solid-phase and excimer laser crystallization for the active semiconductor region, thermal growth and chemical vapor deposition for the gate insulator, and others. It is shown that process optimization has resulted in the fabrication of CMOS transistors with field-effect mobility values in the region of 200 cm/sup 2//V/spl middot/s and I/sub ON//I/sub OFF/ current ratios of at least seven orders of magnitude. The design and performance of high-speed digital CMOS is addressed, and the effects of the conductive foil through parasitic capacitive coupling are examined. CMOS inverter blocks in ring oscillator circuits operating with delay times as low as 1.12 ns are reported, as well as static and dynamic shift registers operating in the megahertz regime. |
| Databáze: | OpenAIRE |
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