The effects of oxygen annealing on the electrical characteristics of hydrothermally grown zinc oxide thin-film transistors
| Autor: | Po-Yu Yang, Tsang-Yen Hsieh, I-Che Lee, Jyh-Liang Wang, Der-Chi Shye, C.C. Hwang |
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| Rok vydání: | 2012 |
| Předmět: |
Materials science
Annealing (metallurgy) business.industry Transistor chemistry.chemical_element Zinc Condensed Matter Physics Zinc oxide thin films Oxygen Hydrothermal circulation Electronic Optical and Magnetic Materials Threshold voltage law.invention chemistry law Materials Chemistry Electronic engineering Optoelectronics Electrical and Electronic Engineering business Oxygen annealing |
| Zdroj: | Solid-State Electronics. 77:72-76 |
| ISSN: | 0038-1101 |
| Popis: | High-performance transparent zinc oxide (ZnO) thin-film transistors (TFTs) with location-controlled lateral-grain growth were fabricated by hydrothermal method. The ZnO active channel was laterally grown with aluminum-doped ZnO (AZO) seed layer underneath the Ti/Pt film. Compare to the unannealed ZnO TFTs, the annealed devices reveal the high-quality ZnO layer with the compensated structural defects in the channel region after oxygen ambient annealing at 400 °C. Therefore, the superior device performances (i.e. the excellent filed-effect mobility of 9.07 cm 2 /V s, positive threshold voltage of 2.25 V, high on/off current ratio of ∼10 6 , and low gate leakage current of |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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