Optically Pumped Edge-Emitting GaAs-Based Laser With Direct Orange Emission
| Autor: | Tomi Leinonen, A. Laakso, Mariia Bister, Mircea Guina, L. Toikkanen, Jukka Viheriälä, Antti Tukiainen, Antti Härkönen, Jari Lyytikäinen |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Materials science
business.industry Physics::Optics Laser pumping Laser Q-switching Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Gain-switching Optical pumping Condensed Matter::Materials Science Optics law Quantum dot laser Optoelectronics Laser power scaling Electrical and Electronic Engineering business Lasing threshold |
| Zdroj: | IEEE Photonics Technology Letters. 26:384-386 |
| ISSN: | 1941-0174 1041-1135 |
| Popis: | Room temperature lasing operation at 599 nm for a AlGaInP/AlInP/GaAs edge-emitting laser structure is reported. The structure was grown on GaAs substrate and pumped optically with a 532 nm Q-switched laser. The lasing threshold for a 2 mm long and 25 μm wide ridge waveguide structure was 30 mW of average pump power. The orange output beam had an optical spectral width of 1.7 nm. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|