Extraction of the Back Channel Mobility in SOI Nanowire MOS Transistors under Substrate Biasing

Autor: Flavio E. Bergamaschi, Gilson I. Wirth, Sylvain Barraud, Mikael Casse, Maud Vinet, Olivier Faynot, Marcelo A. Pavanello
Rok vydání: 2022
Zdroj: 2022 IEEE Latin American Electron Devices Conference (LAEDC).
DOI: 10.1109/laedc54796.2022.9908214
Databáze: OpenAIRE