Bias enhanced nucleation and growth processes for improving the electron field emission properties of diamond films
| Autor: | I-Nan Lin, Gaung-Chin Tzeng, Hsiu-Fung Cheng, Huang-Chin Chen, Chen-Yau Tang, Kuang-Yau Teng |
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| Rok vydání: | 2013 |
| Předmět: |
Materials science
business.industry Material properties of diamond Nucleation Diamond Nanotechnology Surfaces and Interfaces General Chemistry Plasma Electron engineering.material Condensed Matter Physics Surfaces Coatings and Films Field electron emission Crystallinity Materials Chemistry engineering Optoelectronics business Current density |
| Zdroj: | Surface and Coatings Technology. 228:S175-S178 |
| ISSN: | 0257-8972 |
| DOI: | 10.1016/j.surfcoat.2012.06.042 |
| Popis: | The evolution of the characteristics of diamond films in bias-enhanced-nucleation and bias-enhanced-growth (BEN–BEG) processes was systematically investigated. While the BEN process efficiently formed diamond nuclei on the Si-substrates, BEG with large enough applied field (>− 400 V) and for sufficient long period (> 60 min) induced the development of the nano-grain granular structure with proper crystallinity for the diamond films that enhanced the EFE properties of the films. The EFE process can be turned on at a field as small as 3.6 V/μm, attaining an EFE current density as large as 325 μA/cm 2 at an applied field of 15 V/μm for the diamond films, which were BEG under − 400 V for 60 min after BEN (10 min). Such an EFE behavior is even better than that of the ultrananocrystalline diamond films grown in CH 4 /Ar plasma. Transmission electron microscopic studies revealed that the prime factor that enhanced the EFE properties of these films was the induction of the nanographitic filaments along the thickness of the films that facilitated the transport of electron through the films. |
| Databáze: | OpenAIRE |
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