Spectral anisotropy of a photoresponse from heterojunctions based on GaSe and InSe layered crystals
| Autor: | Zakhar R. Kudrynskyi, Zakhar D. Kovalyuk, V. N. Katerinchuk |
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| Rok vydání: | 2014 |
| Předmět: |
Condensed Matter::Quantum Gases
Materials science Physics and Astronomy (miscellaneous) Atomic force microscopy business.industry Heterojunction Modified method Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Spectral line Condensed Matter::Materials Science Condensed Matter::Superconductivity Optoelectronics Anisotropy business |
| Zdroj: | Technical Physics. 59:407-410 |
| ISSN: | 1090-6525 1063-7842 |
| DOI: | 10.1134/s1063784214030141 |
| Popis: | The object of investigation is photoresponse spectra taken from the cleaved end face of heterojunctions formed by GaSe and InSe anisotropic crystals. Spectra taken from the as-prepared and chemically processed faces of the heterojunctions are compared. A modified method of growing GaSe crystals with a virgin end face is suggested, and the surface of GaSe crystals thus grown is examined by atomic force microscopy. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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