Photocurrent amplification in Au/SiO2/n-6H-SiC MOS structures with a tunnel-thin insulator

Autor:	T. P. Samsonova, Pavel Ivanov, I. V. Grekhov, M. I. Veksler, A. F. Shulekin
Rok vydání:	1998
Předmět:	Photocurrent Materials science business.industry Transistor Insulator (electricity) Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Photodiode law.invention law Optoelectronics business Common emitter
Zdroj:	Semiconductors. 32:1024-1026
ISSN:	1090-6479 1063-7826
Popis:	The first observation of amplification of the photogeneration current in Au/SiO2/n-6H-SiC structures with a tunnel-thin insulator is reported. This effect can be used to increase the efficiency of existing UV-range 6H-SiC-based photodiodes. It also shows that bipolar SiC transistors with a MOS tunnel emitter can be produced.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::be889456995ab29b524acb0ddb69fcd6 https://doi.org/10.1134/1.1187538 Zobrazit plný text záznamu Plný text ve formátu PDF