Electronically Cold Microwave Artificial Resistors
| Autor: | T.C. Cisco, R.L. Forward |
|---|---|
| Rok vydání: | 1983 |
| Předmět: |
Noise temperature
Radiation Materials science business.industry Electrical engineering Impedance matching Condensed Matter Physics law.invention Computer Science::Emerging Technologies Transmission line law Optoelectronics Field-effect transistor Electrical and Electronic Engineering Resistor business Electrical impedance Microwave Electronic circuit |
| Zdroj: | IEEE Transactions on Microwave Theory and Techniques. 31:45-50 |
| ISSN: | 0018-9480 |
| DOI: | 10.1109/tmtt.1983.1131427 |
| Popis: | A Iarge percentage of microwave field-effect transistors (FET's) are shown to act as a broad-band artificial resistor with a resistance of about 25 Omega when their drain is connected to their gate. The resistance appears between the gate-drain lead and the source lead. This resistance can be raised to 50 Omega with its reactive components eliminated over a reasonable bandwidth by using a matching transmission line of the proper impedance and a length near a quarter-wave at midband. An HFET- 1000 constructed in this configuration showed an impedance of 18+-3 Omega over an octave bandwidth, and when transformed with a 30-Omega quarter-wave transmission line produced a resistance of 51+-1 Omega from 8 to 13 GHz. A noise analysis shows that, at some frequencies, some FET's in this configuration will produce artificial resistors with an effective noise temperature as low as 67 K. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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