Development of a New Way to Contact Glass-Free Metal Paste onto Silicon Emitter of Conventional Solar Cells with SiNx Coating
| Autor: | Tokuhisa, H., Morita, S., Ise, S., Tsukamoto, S., Tomita, M., Yoshida, M. |
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| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: | |
| DOI: | 10.4229/eupvsec20142014-2cv.4.13 |
| Popis: | 29th European Photovoltaic Solar Energy Conference and Exhibition; 1307-1309 This paper demonstrates a new approach to contact glass-free metal paste onto silicon of the front side of conventional solar cells with SiNx-anti reflection coating (ARC). To open up a certain area of the ARC an etching paste containing phosphoric acid was used. The problem was a SiO2 layer generation over the opened silicon after the etching process since it is an insulator for the glass-free metal paste. Then, we found that addition of a Ag paste without glass frits into the etching paste significantly mitigates the influence of the SiO2 generation, resulting in a good contact formation between the silicon and the glass-free metal paste. For example, printing a Ag resin paste on the etched area using the developed method shows a much lower specific contact resistivity compared to the case without addition of Ag paste. It is almost the same as the resistivity in the case of a conventional Ag metallization with a glass frit. We also found that carbon black in the etching paste has a key role to reduce the contact resistance as well as prevent from Cu diffusion into Si. A preliminary result shows that a performance of solar cells with metallization using the developed method was 11.4%. |
| Databáze: | OpenAIRE |
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