| Autor: |
Vladimir A. Smagley, Marek Osinski, Gennady A. Smolyakov, George J. Simonis, Petr G. Eliseev, Tengiz Svimonishvili |
| Rok vydání: |
1998 |
| Předmět: |
|
| Zdroj: |
SPIE Proceedings. |
| ISSN: |
0277-786X |
| Popis: |
Several vertical-cavity surface-emitting laser (VCSEL) structures are investigated by means of 3D steady-state electrical-thermal-optical numerical modeling. Electrical and thermal models are coupled via: (i) heat generation by current passing through the diode; (ii) temperature dependence of the diffusion potential of the junction; and (iii) temperature dependence of the bulk resistivity of passive material at both sides of the junction. Optical waveguide model is coupled to electrical-thermal model through position-dependent carrier recombination lifetime and temperature-dependent refractive-index. Simulation is performed for cylindrically symmetric two-sided oxide- confined intracavity-contact VCSELs. For comparison purposes, numerical data are acquired for materially identical bottom-emitting mesa laser and p-side intracavity- contact VCSEL. Nonuniformity of the main device characteristics is studied. Several different phenomena are shown to contribute to nonuniformity: (i) current crowding due to device geometry; (ii) current crowding induced by stimulated emission processes; (iii) current spreading related to oxide positioning; (iv) temperature related effects. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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