Contact resistivities of antimony-doped n-type Ge1−xSnx
| Autor: | R. Koerner, Joerg Schulze, V. S. Senthil Srinivasan, Anja Hornung, Inga A. Fischer, Michael Oehme, Erlend Rolseth, Konrad Kostecki, Lion Augel |
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| Rok vydání: | 2016 |
| Předmět: |
Materials science
Analytical chemistry chemistry.chemical_element 02 engineering and technology Manganese 01 natural sciences Metal symbols.namesake Antimony Transition metal Electrical resistivity and conductivity 0103 physical sciences Materials Chemistry Electrical and Electronic Engineering 010302 applied physics Condensed matter physics Doping Fermi level 021001 nanoscience & nanotechnology Condensed Matter Physics Electronic Optical and Magnetic Materials Nickel chemistry visual_art visual_art.visual_art_medium symbols 0210 nano-technology |
| Zdroj: | Semiconductor Science and Technology. 31:08LT01 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | As Ge1−x Sn x is being investigated for CMOS applications, obtaining contacts to n-type Ge1−x Sn x with low specific contact resistivity (ρ c) is a major concern. Here, we present results on specific contact resistivities of Sb doped n-type Ge1−x Sn x with 0 ≤ x ≤ 0.08 also with varying doping concentrations using Ni, Ag and Mn as contact metals. Our results show that Ni offers the lowest ρ c for all x values of Ge1−x Sn x . The lowest ρ c measured for Ni contacts on highly n-doped Ge0.92Sn0.08 is 2.29 × 10−6 Ω cm2. We find a strong dependence of the specific contact resistivity on doping, which we attribute to the fact that strong Fermi level pinning is present in metal/n-Ge1−x Sn x contacts. |
| Databáze: | OpenAIRE |
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