Effect of IR Irradiation on the Oxidation of Thin Cu–Ti Films on Si Substrates at Reduced Oxygen Pressure

Autor:	L. A. Malevskaya, D. M. Pribytkov, A. M. Khoviv
Rok vydání:	2004
Předmět:	Inorganic Chemistry Materials science Chemical engineering General Chemical Engineering Phase composition Materials Chemistry Metals and Alloys Analytical chemistry Irradiation Sputter deposition Oxygen pressure Oxidation rate
Zdroj:	Inorganic Materials. 40:1070-1073
ISSN:	0020-1685
DOI:	10.1023/b:inma.0000046470.53141.3b
Popis:	The effect of IR irradiation on the low-pressure oxidation of thin Cu–Ti films grown on Si by magnetron sputtering is studied, and the phase composition of the films is determined before and after oxidation. The solid-state reactions involved are discussed, and a mechanism is proposed which accounts for the observed decrease in oxidation rate under IR irradiation.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::be4154bb538e408a3747d695d0cc9b4c https://doi.org/10.1023/b:inma.0000046470.53141.3b Zobrazit plný text záznamu Plný text ve formátu PDF