Superlattice HfO2-ZrO2 based Ferro-Stack HfZrO2 FeFETs: Homogeneous-Domain Merits Ultra-Low Error, Low Programming Voltage 4 V and Robust Endurance 109 cycles for Multibit NVM

Autor:	C.-Y. Liao, Z.-F. Lou, C.-Y. Lin, A. Senapati, R. Karmakar, K.-Y. Hsiang, Z.-X. Li, W.-C. Ray, J.-Y. Lee, P.-H. Chen, F.-S. Chang, H.-H. Tseng, C.-C. Wang, J.-H. Tsai, Y.-T. Tang, S. T. Chang, C. W. Liu, S. Maikap, M. H. Lee
Rok vydání:	2022
Zdroj:	2022 International Electron Devices Meeting (IEDM).
DOI:	10.1109/iedm45625.2022.10019369
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::be3c530164e803c858261cdfda6720c8 https://doi.org/10.1109/iedm45625.2022.10019369 Zobrazit plný text záznamu