Electrical spin injection in ferromagnetic/nonmagnetic semiconductor heterostructures
| Autor: | F. Matsukura, Yuzo Ohno, I. Arata, Hideo Ohno, David D. Awschalom, D. K. Young, Bernd Beschoten |
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| Rok vydání: | 2001 |
| Předmět: |
Materials science
Spin polarization Condensed matter physics Condensed Matter::Other business.industry Electroluminescence Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials law.invention Magnetic field Condensed Matter::Materials Science Semiconductor Ferromagnetism law Optoelectronics Condensed Matter::Strongly Correlated Electrons business p–n junction Quantum well Light-emitting diode |
| Zdroj: | Physica E: Low-dimensional Systems and Nanostructures. 10:489-492 |
| ISSN: | 1386-9477 |
| DOI: | 10.1016/s1386-9477(01)00143-6 |
| Popis: | Magneto-electroluminescence properties of ferromagnetic/nonmagnetic semiconductor pn junction light emitting diodes (LEDs) are presented. A ferromagnetic p-type (Ga,Mn)As layer is grown on i-(In,Ga)As quantum well (QW)/n-GaAs so that the degree of spin polarization of holes injected from (Ga,Mn)As into GaAs can be probed by analyzing the polarization of light emitted from the LED structures. The EL polarization as a function of magnetic field exhibits clear hysteresis below the ferromagnetic transition temperature of (Ga,Mn)As, which is the evidence that spin-polarized electrical current is injected into nonmagnetic semiconductor. |
| Databáze: | OpenAIRE |
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