| Autor: |
Evan MacQuarrie, Daniel B. Higginbottom, S. Roorda, Stephanie Simmons, C. Chartrand, V. A. Karasyuk, K. J. Morse |
| Rok vydání: |
2021 |
| Předmět: |
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| Zdroj: |
New Journal of Physics. 23:103008 |
| ISSN: |
1367-2630 |
| Popis: |
Global quantum networks will benefit from the reliable fabrication and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow O-band optical transition near 1326 nm and long-lived electron and nuclear spin lifetimes. To date, these defect centres have only been studied as ensembles in bulk silicon. Here, we fabricate high concentration T centre ensembles in the 220 nm device layer of silicon-on-insulator (SOI) wafers by ion implantation and subsequent annealing. We then develop a method that uses spin-dependent optical transitions to benchmark the characteristic optical spectral diffusion within these T centre ensembles. Using this new technique, we show that with minimal optimization to the fabrication process high densities of implanted T centres localized |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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