Photo- and electroluminescence features of films and field effect transistors based on inorganic perovskite nanocrystals embedded in a polymer matrix
| Autor: | Irina N. Trapeznikova, Vasily N. Petrov, Maksat K. Ovezov, Leo B. Matyushkin, Olga P. Chikalova-Luzina, Andrey N. Aleshin, Anastasia M. Ershova, Igor Shcherbakov |
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| Rok vydání: | 2020 |
| Předmět: |
Electron mobility
Materials science 02 engineering and technology Electroluminescence 010402 general chemistry 01 natural sciences law.invention law Materials Chemistry Rectangular potential barrier Perovskite (structure) Nanocomposite business.industry Mechanical Engineering Metals and Alloys 021001 nanoscience & nanotechnology Condensed Matter Physics 0104 chemical sciences Electronic Optical and Magnetic Materials Mechanics of Materials Optoelectronics Field-effect transistor Charge carrier 0210 nano-technology business Light-emitting diode |
| Zdroj: | Synthetic Metals. 260:116291 |
| ISSN: | 0379-6779 |
| DOI: | 10.1016/j.synthmet.2020.116291 |
| Popis: | The optical and electrical properties of films and field-effect transistors (FETs) based on pure MEH-PPV, neat CsPbBr3 nanocrystals (NCs), and MEH-PPV:CsPbBr3 NCs composites with different contents of CsPbBr3 NCs are investigated. The films were characterized by absorbance, atomic-force microscope and current-voltage characteristics (I-Vs) techniques. Relative PL and EL intensities and PL spectra of the pure MEH-PPV, neat CsPbBr3 NCs and MEH-PPV:CsPbBr3 NCs films were measured at 300 K at various levels of optical and electrical excitation power; these dependencies of the PL and EL intensities turned out to be sublinear and superlinear respectively. FETs based on MEH-PPV:CsPbBr3 NCs (1:1) films exhibit I-Vs at 290 – 100 K a dominant hole transport mechanism. The mobility of charge carriers was determined at 290 K for neat CsPbBr3 NCs (for electrons: 2.7 10−2 cm2/Vs) and MEH-PPV:CsPbBr3 NCs (1:1) (for holes: 9 cm2/Vs). The temperature dependence of the hole mobility μFET(T) of FETs based on MEH-PPV:CsPbBr3 NCs (1:1) films characteristic of the hopping mode. It was found that the superlinearity of the dependence of EL of MEH-PPV:CsPbBr3 NCs LE-FETs at 290 K increases with increasing concentration of CsPbBr3 NCs due to efficient energy transfer between CsPbBr3 NCs and the MEH-PPV polymer matrix, and also because of the probability of electron tunneling through the potential barrier to electrode. It is expected that the obtained MEH-PPV:CsPbBr3 NCs nanocomposite films will be useful for efficient applications in nanotechnology LEDs, FETs and LE-FETs. |
| Databáze: | OpenAIRE |
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