Metal–insulator–metal capacitors with MOCVD grown Ce–Al–O as a dielectric
| Autor: | Martynas Skapas, V. Kubilius, M. Lukosius, Adulfas Abrutis, Ch. Wenger, A. Zauner, C. Baristiran-Kaynak, Guenther Ruhl |
|---|---|
| Rok vydání: | 2011 |
| Předmět: |
Cerium oxide
Materials science Analytical chemistry chemistry.chemical_element Dielectric Chemical vapor deposition Condensed Matter Physics Electron beam physical vapor deposition Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Amorphous solid Cerium chemistry Electrical and Electronic Engineering Thin film Tin |
| Zdroj: | Microelectronic Engineering. 88:1529-1532 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2011.03.044 |
| Popis: | Ce-Al-O thin films were prepared on 70nm TiN/Si(100) substrates by pulsed injection metal organic chemical vapor deposition (PI-MOCVD) for metal-insulator-metal (MIM) applications. Depositions were carried out at 400^oC using two separate Ce and Al precursors. In order to get Ce-Al-O films with different stoichiometry, Al"2O"3 and CeO"2 were mixed with different Ce:Al precursors' ratios. According to the XRD analysis, the as deposited films were amorphous if more aluminum was injected than cerium, and crystalline - if they are cerium rich. Electrical properties have been investigated in MIM capacitors after e-beam evaporation of Au top electrodes. Oxides possess a dielectric constant of 10-20 in combination with leakage current densities as low as 10^-^5A/cm^2 at -2V. The post deposition annealing (PDA) at 600^oC and 850^oC in N"2 for 5min lead to the diffusion of Ti from TiN bottom electrode and formation of the rutile TiO"2 phase. Nevertheless, CeAlO"3 films were obtained if the ratio of injected Ce:Al was 1:1. The k values increased to 60 in this case, but the leakage current density worsened to 10^-^3A/cm^2 at -2V. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect