Some properties of chemically vapor deposited films of AlxOyNz on silicon
| Autor: | G. R. Woolhouse, Eugene A. Irene, Victor Joseph Silvestri |
|---|---|
| Rok vydání: | 1975 |
| Předmět: |
Materials science
Silicon Spinel Analytical chemistry chemistry.chemical_element Chemical vapor deposition engineering.material Condensed Matter Physics Electronic Optical and Magnetic Materials Amorphous solid Carbon film chemistry Phase (matter) Materials Chemistry engineering Crystallite Electrical and Electronic Engineering Thin film |
| Zdroj: | Journal of Electronic Materials. 4:409-427 |
| ISSN: | 1543-186X 0361-5235 |
| DOI: | 10.1007/bf02666227 |
| Popis: | Transmission electron microscopy (TEM) studies of films prepared in the AlN-Al2O3 pseudobinary system by chemical vapor deposition (as described in a companion paper entitled, “Chemical Vapor Deposition of AlxOyNz Films”) indicates that four different phases can be obtained by altering the NH3/CO2 gas ratio and preparation temperature. Films prepared at 900°C yield three polycrystalline phases and an amorphous composition. From zero to 25 at. percent O an AlN phase is observed. Amorphous material is observed from 25 to 47 at. percent O. From 47 to 59 at. percent O an AlxOyNz spinel is observed. At 60 at. percent O (pure Al2O3) an alumina phase is observed (KI phase). For 770°C films the AlN phase is observed from zero to 8 at. percent 0; from 8 to 23 at. percent O the zeta-alumina phase is seen; and at 60 at. percent O the KI alumina phase is again observed. For both the 770 and 900°C films, the grain size of the AlN phase was found to decrease with increasing oxygen content. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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