Boron Doping during Vapor-Liquid-Solid Growth of Homoepitaxial 4H-SiC Layers
Autor: | Gabriel Ferro, Nada Habka, K. Zahraman, Bilal Nsouli, Maher Soueidan, Yves Monteil, Ghassan Younes, Jean-Marie Bluet, Veronique Soulière |
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Rok vydání: | 2007 |
Předmět: |
Photoluminescence
Materials science Mechanical Engineering Doping Analytical chemistry Crucible chemistry.chemical_element Mineralogy Atmospheric temperature range Condensed Matter Physics chemistry.chemical_compound symbols.namesake chemistry Mechanics of Materials Propane symbols General Materials Science Wetting Boron Raman spectroscopy |
Zdroj: | Materials Science Forum. :65-68 |
ISSN: | 1662-9752 |
DOI: | 10.4028/www.scientific.net/msf.556-557.65 |
Popis: | Vapor-Liquid-Solid was used for growing boron doped homoepitaxial SiC layers on 4HSiC( 0001) 8°off substrates. Si-based melts were fed by propane (5 sccm) in the temperature range 1450-1500°C. Two main approaches were studied to incorporate boron during growth : 1) adding elemental B in the initial melt, with two different compositions : Si90B10 and Si27Ge68B5; the growth was performed at 1500°C; 2) adding B2H6 (1 to 5 sccm) to the gas phase during growth with a melt composition of Si25Ge75; the growth was performed at 1450°C. In most cases, the growth time was limited by liquid loss due to wetting on the crucible walls. The longer growth duration (1h) was obtained when adding B2H6 to the gas phase. In the case of Si90B10 melt, the surface morphology exhibits large and parallel terraces whereas the step front is more undulated when adding Ge. Raman and photoluminescence characterizations performed on these layers confirmed the 4H polytype of the layers in addition to the presence of B which results in a strong B-N donor-acceptor band. Particle induced γ-ray emission was also used to detect B incorporation inside the grown layers. |
Databáze: | OpenAIRE |
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