Accuracy of series resistances extraction schemes for polysilicon bipolar transistors
| Autor: | Emmanuel Dubois, E. Robilliart, P.-H. Bricout |
|---|---|
| Rok vydání: | 2002 |
| Předmět: |
Materials science
Series (mathematics) Electrical resistance and conductance business.industry Heterostructure-emitter bipolar transistor Polysilicon depletion effect Bipolar junction transistor Physics::Accelerator Physics Optoelectronics Extraction (military) Sensitivity (control systems) business Common emitter |
| Zdroj: | Proceedings of IEEE Bipolar/BiCMOS Circuits and Technology Meeting. |
| DOI: | 10.1109/bipol.1994.587883 |
| Popis: | In this work, two experimental methods used for the determination of the emitter and base series resistances are critically reviewed and compared to an accurate solution based on device simulations. In addition, the sensitivity of the series resistances on the potential barriers present at the emitter polysilicon/monocrystal interface is investigated. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|