Peculiarities of the energy spectrum of InSb/InAs/InGaAs/InAlAs/GaAs nanoheterostructures revealed by room temperature photomodulation FTIR spectroscopy
| Autor: | Stefan Ivanov, Mikhail Yu. Chernov, Aleksey D. Andreev, V. A. Solov’ev, O. S. Komkov, D. D. Firsov |
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| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) business.industry Infrared General Engineering General Physics and Astronomy 01 natural sciences Spectral line 0103 physical sciences Energy spectrum Optoelectronics Ingaas inalas Fourier transform infrared spectroscopy business Layer (electronics) Quantum well Molecular beam epitaxy |
| Zdroj: | Japanese Journal of Applied Physics. 58:050923 |
| ISSN: | 1347-4065 0021-4922 |
| DOI: | 10.7567/1347-4065/ab180e |
| Popis: | Fourier-transform infrared photoreflectance was used to optimize design and growth temperature of complex III–V nanoheterostructures proposed for efficient mid-IR emitters. They comprised an InAs/InGaAs quantum well (QW) with InSb sub-monolayer insertions and were grown by molecular beam epitaxy on GaAs substrates via a convex-graded InAlAs metamorphic buffer layer. The room temperature photoreflectance spectra supported by the full 8 × 8 Kane model calculations showed that the triple InSb insertions enhance the probability of the main optical transitions in the QW, while lowering the growth temperature results in a red shift of the transitions and further increase in their probability. |
| Databáze: | OpenAIRE |
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