Exciton Diffusion in GaN Epitaxial Layers
| Autor: | A. A. Gladyshchuk, Michael Heuken, Yu. Rakovich, Bernd Schineller, G. P. Yablonskii, John F. Donegan |
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| Rok vydání: | 2001 |
| Předmět: |
Thermal equilibrium
Photoluminescence Condensed matter physics Condensed Matter::Other Chemistry Exciton Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Epitaxy Electronic Optical and Magnetic Materials Crystal Condensed Matter::Materials Science Reflection (mathematics) Metalorganic vapour phase epitaxy Diffusion (business) |
| Zdroj: | physica status solidi (b). 228:493-496 |
| ISSN: | 1521-3951 0370-1972 |
| DOI: | 10.1002/1521-3951(200111)228:2<493::aid-pssb493>3.0.co;2-6 |
| Popis: | The photoluminescence (PL) and reflection excitonic spectra of GaN epitaxial layers grown on sapphire substrate by MOVPE were measured in the temperature region from 50 to 200 K. A three-layer model of the crystal was used for fitting the reflection spectrum. In this way the dead layer thickness, resonance energies and the broadening parameters of the free excitons were obtained. These parameters were then used for fitting the PL spectra assuming a thermal equilibrium for excitons. A decrease in the diffusion coefficient and increase in the radiative lifetime of excitons was found with increasing temperature. |
| Databáze: | OpenAIRE |
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