Low-Power and High-Reliability Gadolinium Oxide Resistive Switching Memory with Remote Ammonia Plasma Treatment

Autor:	Jer-Chyi Wang, Yu-Ren Ye, Jung Hung Chang, Chih-I Wu, Jhih-Sian Syu, Po-Sheng Wang, Pin-Ru Wu
Rok vydání:	2013
Předmět:	inorganic chemicals Passivation Hydrogen Chemistry General Engineering Analytical chemistry General Physics and Astronomy chemistry.chemical_element Plasma Electron Nitrogen Resistive random-access memory Ammonia chemistry.chemical_compound Grain boundary
Zdroj:	Japanese Journal of Applied Physics. 52:04CD07
ISSN:	1347-4065 0021-4922
DOI:	10.7567/jjap.52.04cd07
Popis:	The effects of remote NH3 plasma treatment on a Pt/Gd x O y /W resistive random access memory (RRAM) metal–insulator–metal (MIM) structure were investigated. We found that a decrease in the electron barrier height caused by nitrogen incorporation at the Pt–Gd x O y interface can help reduce the operational set and reset voltages. Nitrogen atoms from the NH3 plasma prevent oxygen atoms in the film from diffusing through Pt grain boundaries into the atmosphere, resulting in superior retention properties (>104 s). The stability of the endurance behavior of Gd x O y RRAMs was significantly improved owing to the passivation of defects in Gd x O y films by nitrogen and hydrogen atoms from the remote NH3 plasma, markedly reducing plasma damage.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bdde3b77f305101a6bd18976453d79de https://doi.org/10.7567/jjap.52.04cd07 Zobrazit plný text záznamu