Effects of dc bias on the kinetics and electrical properties of silicon dioxide grown in an electron cyclotron resonance plasma
| Autor: | D. W. Hess, Tai D. Nguyen, Michael A. Lieberman, D. A. Carl, Ronald Gronsky |
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| Rok vydání: | 1991 |
| Předmět: | |
| Zdroj: | Journal of Applied Physics. 70:3301-3313 |
| ISSN: | 1089-7550 0021-8979 |
| DOI: | 10.1063/1.349264 |
| Popis: | Thin (3–300‐nm) oxides were grown on single‐crystal silicon substrates at temperatures from 523 to 673 K in a low‐pressure electron cyclotron resonance (ECR) oxygen plasma. Oxides were grown under floating, anodic or cathodic bias conditions, although only the oxides grown under floating or anodic bias conditions are acceptable for use as gate dielectrics in metal‐oxide‐semiconductor technology. Oxide thickness uniformity as measured by ellipsometry decreased with increasing oxidation time for all bias conditions. Oxidation kinetics under anodic conditions can be explained by negatively charged atomic oxygen, O−, transport limited growth. Constant current anodizations yielded three regions of growth: (1) a concentration gradient dominated regime for oxides thinner than 10 nm, (2) a field dominated regime with ohmic charged oxidant transport for oxide thickness in the range of 10 nm to approximately 100 nm, and (3) a space‐charge limited regime for films thicker than approximately 100 nm. The relationship ... |
| Databáze: | OpenAIRE |
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