Impact of Indium and Boron Interaction on Device Performance for Short and Narrow Channel n-Metal Oxide Semiconductor Field Effect Transistors
| Autor: | Alex See, Shiang Yang Ong, Eng Fong Chor, Lap Chan, James Yong Meng Lee |
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| Rok vydání: | 2002 |
| Předmět: |
inorganic chemicals
Materials science Dopant Renewable Energy Sustainability and the Environment business.industry digestive oral and skin physiology Electrical engineering chemistry.chemical_element respiratory system Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Ion implantation chemistry MOSFET Materials Chemistry Electrochemistry Optoelectronics Degradation (geology) Field-effect transistor business Boron Indium Communication channel |
| Zdroj: | Journal of The Electrochemical Society. 149:G485 |
| ISSN: | 0013-4651 |
| DOI: | 10.1149/1.1488918 |
| Popis: | The effects of indium and boron interaction in the channel region on device performance have been investigated. The two main areas of focus are the impact of replacing boron with indium as the channel and pocket implants. These are assessed based on the experimental results of short channel effects (SCE) and reverse short channel effects (RSCE). SCE and RSCE are significantly improved by integrating high-dose boron pocket and low indium implant energy, respectively. Experiments done using an indium pocket show severe degradation in SCE control, possibly due to poor activation of the indium dopant. Last, significant improvement in reverse narrow channel effects has been demonstrated by indium channel narrow devices. All experimental data are supported with process and device simulation results using TSUPREM4 and MEDICI, respectively. This allows a correlation between the channel-doping profile and the electrical data. |
| Databáze: | OpenAIRE |
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