| Autor: |
L. Sambuco Salomone, Adrian Faigon, O. Beldarrain, Francesca Campabadal |
| Rok vydání: |
2015 |
| Předmět: |
|
| Zdroj: |
2015 Argentine School of Micro-Nanoelectronics, Technology and Applications (EAMTA). |
| Popis: |
A quantized bands model capable to generate capacitance-voltage (C-V) curves of MOS capacitors was implemented and numerical details are discussed. This model is applied to the extraction of the dielectric constant of Al 2 O 3 layers with known physical thicknesses by fitting experimental results. A comparison with a continuum band model is presented. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
|
