Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates

Autor:	Marko J. Tadjer, Fikadu Alema, Andrei Osinsky, Michael Mastro, Neeraj Nepal, Jeffrey Woodward, Rachael Myers-Ward, Evan Glaser, Jaime Freitas, Alan Jacobs, James Gallagher, Alyssa Mock, Daniel Pennachio, Jenifer Hajzus, Mona Ebrish, Travis Anderson, Karl Hobart, Jennifer Hite, Charles Eddy
Rok vydání:	2021
Zdroj:	Radar Sensor Technology XXV.
DOI:	10.1117/12.2588499
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bdc9b51d36147be205ecad2edbed1e80 https://doi.org/10.1117/12.2588499 Zobrazit plný text záznamu