Al-oxynitrides as a buffer layer for Pr2O3/SiC interfaces

Autor:	Dieter Schmeißer, Karsten Henkel, Patrick Hoffmann, Mohamed Torche, Massimo Tallarida, Rakesh Sohal
Rok vydání:	2006
Předmět:	Materials science Diffusion barrier Photoemission spectroscopy Annealing (metallurgy) Mechanical Engineering Analytical chemistry Wide-bandgap semiconductor Synchrotron radiation Dielectric Condensed Matter Physics Mechanics of Materials General Materials Science Thermal stability High-κ dielectric
Zdroj:	Materials Science in Semiconductor Processing. 9:945-948
ISSN:	1369-8001
DOI:	10.1016/j.mssp.2006.10.047
Popis:	We elaborate the possibility of combining high- k dielectrics with wide band gap semiconductors, i.e. Pr 2 O 3 on SiC. The thermal stability of interfacial aluminum oxynitride (AlON) layers between Pr-oxide and SiC has been investigated by synchrotron radiation photoemission spectroscopy (SRPES). The interface of Pr 2 O 3 with SiC is reactive. Such reaction is successfully prevented by utilizing a stable interlayer derived from AlON. No elemental carbon is observed in detectable amount after Pr-Oxide deposition on AlON covered 3C-SiC and subsequent vacuum annealing. After vacuum annealing at 500 °C AlON transformed to AlN and Pr-aluminate with a small amount of CN close to the SiC surface which were thermally stable even at 900 °C. AlON hence provides a good diffusion barrier between Pr-oxide dielectric and 3C-SiC.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bdc5e161973b683bd6d218b8a014e20e https://doi.org/10.1016/j.mssp.2006.10.047 Zobrazit plný text záznamu Full Text from ScienceDirect