A n2+−n+−n blocking contact structure for an intrinsic photoconductor

Autor:	Vishnu Gopal, Rachana Kumar, K.C. Chhabra
Rok vydání:	1991
Předmět:	chemistry.chemical_classification Recombination velocity Materials science business.industry Blocking (radio) Photoconductivity Doping General Engineering Analytical chemistry Low frequency Responsivity Optics chemistry business Inorganic compound Layer (electronics)
Zdroj:	Infrared Physics. 31:435-440
ISSN:	0020-0891
DOI:	10.1016/0020-0891(91)90020-g
Popis:	The effect of adding a highly doped layer (n2+) to a conventional (n+−n) blocking contact structure on the low frequency responsivity of a photoconductor has been studied. Analytical expressions relating the responsivity to the structure of a n2+−n+−n blocking contact are presented. Calculations have shown that addition of a n2+ layer enhances the responsivity further. Optimum thickness of n2+ and n+ layers are however dependent on the carrier recombination velocity at the metal-semiconductor interface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bdb8c75e5e678f55b39ec691a13ac3c0 https://doi.org/10.1016/0020-0891(91)90020-g Zobrazit plný text záznamu