A compact GaN Bi-directional switching diode with a GaN Bi-directional power switch and an Isolated gate driver
| Autor: | Shuichi Nagai, Hiroaki Ueno, Noboru Negoro, Yasuhiro Yamada, Miori Hiraiwa, Masahiro Ishida, Songbaek Choe, Yasufumi Kawai, Osamu Tabata, Go Yamada |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering Gallium nitride 02 engineering and technology Heat sink 01 natural sciences Optical switch chemistry.chemical_compound chemistry Logic gate 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Gate driver Optoelectronics Power semiconductor device Wireless power transfer business Diode |
| Zdroj: | 2016 28th International Symposium on Power Semiconductor Devices and ICs (ISPSD). |
| DOI: | 10.1109/ispsd.2016.7520808 |
| Popis: | A compact and fast GaN bi-directional switching diode is described, which is integrated with a GaN/Si bi-directional power switch and a Drive-by-Microwave (DBM) isolated gate driver using a microwave wireless power transfer. The fabricated 600V 15A GaN bi-directional switching diode exhibits its low Ron of 160 mΩ under 85 °C ambient temperature without an external heat sink. The compact 12mm × 25.5mm × 3mm module also has a cooling pad to directly release heat from the GaN bi-directional power switch. By the fabricated module, the 1.0 MHz fast current direction switching was successfully realized with constant low power consumption of 0.8W thank to a gate power sharing technic by the DBM gate driver. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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