Modeling of LDMOS and LIGBT structures at high temperatures

Autor:	J. Serafin, B. Fatemizadeh, M. Fullmann, D. Silber
Rok vydání:	2002
Předmět:	LDMOS Materials science Thermal network Hardware_INTEGRATEDCIRCUITS Electronic engineering Hardware_PERFORMANCEANDRELIABILITY Device parameters Network model
Zdroj:	Proceedings of the 6th International Symposium on Power Semiconductor Devices and Ics.
DOI:	10.1109/ispsd.1994.583676
Popis:	Lateral IGBTs on SOI-substrates at high temperatures are investigated. Electrical-thermal network models for these devices have been developed taking into account the temperature dependence of the device parameters as well as the thermal network. The modeling results are verified by the experiments. The models have been simplified to a level which enables implementation in most circuit and system simulators for use in the electrothermal analysis.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bda66df90e72c682b3e993676c9551d8 https://doi.org/10.1109/ispsd.1994.583676 Zobrazit plný text záznamu