Investigation into HCl improvement by a split-reeessed-gate structure in an STI-based nLDMOSFET
| Autor: | Takashi Ipposhi, Hiroki Fujii, Shunji Kubo, Takahiro Mori |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
LDMOS Materials science business.industry 020208 electrical & electronic engineering Electrical engineering 02 engineering and technology Generation rate Edge (geometry) 01 natural sciences Stress (mechanics) Impact ionization Gate oxide Electric field 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Degradation (geology) business |
| Zdroj: | 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD). |
| DOI: | 10.23919/ispsd.2017.7988878 |
| Popis: | In this paper, we propose a Split-Recessed-Gate LDMOS (SRG-LDMOS) which minimizes HCl degradation with negligible increase in specific on-resistance. In SRG-LDMOS structure, the gate poly is split into two parts, the primal gate on the channel and the secondary recessed gate on the STI. This secondary recessed gate is nominally connected to source to minimize the HCl degradation although it is possible to be biased independently. The recessed gate connected to source helps to relax the electric field and decrease the impact ionization generation rate near the channel-side STI edge during the HCl stress. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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