Effect of Oxygen Plasma Treatment on Characteristics of TiO$_{2}$ Photodetectors
| Autor: | Walter Water, W. S. Shih, Teen-Hang Meen, Sheng-Joue Young, Liang-Wen Ji, H. W. Shiu |
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| Rok vydání: | 2011 |
| Předmět: |
Photoluminescence
Materials science business.industry Scanning electron microscope Analytical chemistry Photodetector Sputter deposition medicine.disease_cause chemistry.chemical_compound chemistry Sputtering Titanium dioxide medicine Optoelectronics Radio frequency Electrical and Electronic Engineering business Instrumentation Ultraviolet |
| Zdroj: | IEEE Sensors Journal. 11:3031-3035 |
| ISSN: | 1558-1748 1530-437X |
| DOI: | 10.1109/jsen.2011.2150212 |
| Popis: | In this study, titanium dioxide (TiO2) films were prepared on Corning glass substrates by radio frequency (RF) magnetron sputtering and treated with different O2 plasma conditions, and then were used to fabricate metal-semiconductor-metal (MSM) ultraviolet (UV) photodetectors (PDs). The effects of the changes on TiO2 films were investigated by using field-emission scanning electron microscope (FE-SEM), photoluminescence (PL) system and four-point probe measurement. With a 360-nm illumination and 5 V applied bias, it was found that the responsivities of the fabricated TiO2 PDs with 0, 1, 2, and 3 min O2 plasma treatment were 36, 144, 153, and 53 A/W, respectively. |
| Databáze: | OpenAIRE |
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