Generation–recombination reduction in InAsSb photodiodes
| Autor: | Xavier Marcadet, Charles Renard, Borge Vinter, Mathieu Carras, Vincent Berger, J.L. Reverchon |
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| Rok vydání: | 2006 |
| Předmět: |
Range (particle radiation)
business.industry Infrared Chemistry Detector Doping Condensed Matter Physics Electronic Optical and Magnetic Materials Photodiode law.invention law Antimonide Materials Chemistry Optoelectronics Electrical and Electronic Engineering Diffusion (business) business Recombination |
| Zdroj: | Semiconductor Science and Technology. 21:1720-1723 |
| ISSN: | 1361-6641 0268-1242 |
| Popis: | Generation?recombination processes in a narrow band gap active region of infrared photodiodes are studied theoretically and experimentally. Thanks to an analysis of the transport in InAsSb photodiodes as a function of temperature, we demonstrate that these processes can be reduced by controlling the doping of the active region. The first Auger-dominated detector in this spectral range is shown, with negligible diffusion and SRH generation?recombination processes. This leads to the highest detectivity ever reported for a high-temperature antimonide-based detector in this spectral range: D* = 2.5 ? 1010 cm Hz1/2 W?1 at 250 K and 1.3 ? 1011 cm Hz1/2 W?1 at 180 K and ? = 3.39 ?m. |
| Databáze: | OpenAIRE |
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