13.1 A fully integrated multimode front-end module for GSM/EDGE/TD-SCDMA/TD-LTE applications using a Class-F CMOS power amplifier
| Autor: | Chien-Cheng Lin, George Chien, Tao-Yao Chang, Chris Beale, Guang-Kaai Dehng, Bernard Mark Tenbroek, Lai-Ching Lin, Chien-Wei Tseng, Ping-Yu Chen, Ming-Da Tsai, Chinq-Shiun Chiu, Bosen Tseng |
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| Rok vydání: | 2017 |
| Předmět: |
Engineering
business.industry Amplifier 020208 electrical & electronic engineering Transistor Electrical engineering 020206 networking & telecommunications 02 engineering and technology Die (integrated circuit) law.invention GSM law Logic gate 0202 electrical engineering electronic engineering information engineering Electronic engineering Power dividers and directional couplers Enhanced Data Rates for GSM Evolution Antenna (radio) business |
| Zdroj: | ISSCC |
| Popis: | The RF front-end complexity in 4G multimode multiband cellular radios has increased dramatically, requiring integration of PAs, filters and switches in a single module to reduce the RF footprint. This paper presents a fully integrated multimode TDD transmit front-end module (TXM) supporting GSM/EDGE/TD-SCDMA/TD-LTE in multiple bands. The TXM is implemented with three die on a 2-layer laminate LGA module (Figs. 13.1.1 and 13.1.7). Two multimode multiband power amplifier paths (LB/HB) are implemented in a 0.153µm 1P6M CMOS process, followed by power combiners and harmonic filters in a 0.18µm 3M2V IPD die and finally an SP10T antenna switch in a 0.18µm 1P3M SOI process. The Si substrate of good thermal conductivity dissipates the heat generated by PA transistors to the laminated substrate, which solder mask opened and lots of ground vias are deployed underneath the die to effectively conduct the heat out of the package. |
| Databáze: | OpenAIRE |
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