| Autor: |
Nicholas V. Morozovsky, S. V. Shil’ko, Anna N. Morozovska, E. M. Petrokovets, Alyaxandr N. Pyatlitski, Yu.M. Pleskachevsky, A. V. Semchenko, V. V. Kolos, A.S. Turtsevich, Sergei Khakhomov, V. V. Sidsky |
| Rok vydání: |
2016 |
| Předmět: |
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| Zdroj: |
Advances in Intelligent Systems and Computing ISBN: 9783319464893 |
| DOI: |
10.1007/978-3-319-46490-9_15 |
| Popis: |
One of the urgent problems of modern engineering is to obtain a ferroelectric capacitor for various structures. A promising material in the class of ferroelectrics with perovskite structure is strontium bismuth tantalate-niobate SrxBiyNbzTa2−zO9 (SBTN). The synthesized layers should be homogeneous on structure and thickness, to have good fatigue characteristics (i.e. to not change value of remanent polarization after repeated carrying out of cycles inclusion/deenergizing) and to possess small leakage current. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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