Control of the Power Semiconductor Thermal Mode Involving the Concept of Transient Thermal Impedance

Autor: A. V. Efanov, A. B. Ershov, V. Ya. Khorolsky, I. V. Atanov
Rok vydání: 2019
Předmět:
Zdroj: Russian Electrical Engineering. 90:199-203
ISSN: 1934-8010
1068-3712
DOI: 10.3103/s1068371219030088
Popis: The problems of providing thermal stability of the power semiconductors under the effect of dramatic dynamic current overloading were considered. A new method was proposed of intelligent thermal protection of power semiconductors that is based on the application of the equivalent thermal time constant of the power device physical structure determined by the transition function of the thermosensitive parameter.
Databáze: OpenAIRE