Combined SCM and Nanoprobing Study of Resistive Fails on SOI FinFET Devices

Autor:	Lucile C. Teague Sheridan, Don Nedeau
Rok vydání:	2020
Předmět:	Electrical and Electronic Engineering Safety Risk Reliability and Quality
Zdroj:	EDFA Technical Articles. 22:22-28
ISSN:	1537-0755
DOI:	10.31399/asm.edfa.2020-2.p022
Popis:	Scanning capacitance microscopy (SCM) and nanoprobing are key tools for isolating and understanding transistor level fails. In this case study, SCM and nanoprobing are used to determine the electrical characteristics of cluster-type failures in 14 nm SOI FinFET SRAM after standard FIB cross-section imaging failed to reveal any visible defects.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bd8deb5750c89a5c06be2252660b3683 https://doi.org/10.31399/asm.edfa.2020-2.p022 Zobrazit plný text záznamu Plný text ve formátu PDF