Recent progress in silicon carbide field effect gas sensors

Autor:	Donatella Puglisi, Anita Lloyd Spetz, Mike Andersson
Rok vydání:	2020
Předmět:	chemistry.chemical_compound Materials science Semiconductor chemistry business.industry Hardware_INTEGRATEDCIRCUITS Silicon carbide Field effect Optoelectronics business Operation temperature
DOI:	10.1016/b978-0-08-102559-8.00010-0
Popis:	The introduction of silicon carbide as the semiconductor in gas-sensitive field effect devices has disruptively improved this sensor platform extending the operation temperature to more than 600 °C ...
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bd82e29145485150bcfc20c90caaeecb https://doi.org/10.1016/b978-0-08-102559-8.00010-0 Zobrazit plný text záznamu