Autor:	Jung Hwan Oh, Geung Ho Kim, Byung Jun Oh, Doo Jin Choi, Hue Sup Song
Rok vydání:	2001
Předmět:	Materials science Mechanical Engineering Kinetics Mineralogy Microstructure Carbide chemistry.chemical_compound chemistry Chemical engineering Mechanics of Materials Mass transfer Silicon carbide Deposition (phase transition) General Materials Science Growth rate Texture (crystalline)
Zdroj:	Journal of Materials Science. 36:1695-1700
ISSN:	0022-2461
DOI:	10.1023/a:1017508205412
Popis:	In an effort to protect a RBSC (reaction-bonded silicon carbide) reaction tube, SiC films were chemically vapor deposited on RBSC substrates. SiC films were prepared to investigate the effect of the input gas ratios (dilute ratio, α = PH2/PMTS = QH2/QMTS) on the growth behavior using MTS (metyltrichlorosilane, CH3SiCly3) as a source in hydrogen atmosphere. The growth rate of SiC films increased and then decreased with the decrease of the input gas ratio at the deposition temperature of 1250°C. The microstructure and preferred orientation of SiC films were changed with the input gas ratio; Granular type grain structure exhibited the preferred orientation of (111) plane in the high input gas ratio region (α = 3–10). Faceted columnar grain structure showed the preferred orientation of (220) plane at the low input gas ratios (α = 1–2). The growth behavior of CVD SiC films with the input gas ratio was correlated with the change of the deposition mechanism from surface kinetics to mass transfer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bd7e4ba2cf7d6bae5a42fc3eda8bb2a3 https://doi.org/10.1023/a:1017508205412 Zobrazit plný text záznamu Full text from SpringerLink