ChemInform Abstract: Boron Ultrashallow Junction Formation in Silicon by Low-Energy Implantation and Rapid Thermal Annealing in Inert and Oxidizing Ambient

Autor:	H. Walk, Steven D. Marcus, Wilfried Lerch, Judy W. Chow, Daniel F. Downey, Nicolaas Stolwijk, M. Schaefer, M. Glueck
Rok vydání:	2010
Předmět:	Inert Low energy Silicon Chemical engineering Chemistry Oxidizing agent chemistry.chemical_element Junction formation General Medicine Rapid thermal annealing Boron
Zdroj:	ChemInform. 30
ISSN:	1522-2667 0931-7597
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bd7e1cbe1217305d46c3613f1534ec78 https://doi.org/10.1002/chin.199944306 Zobrazit plný text záznamu Plný text