Structural characterization of heavily Zn-doped liquid encapsulated Czochralski InP
| Autor: | J. L. Weyher, Roberto Fornari, C. Frigeri, C. Ferrari, G.M. Guadalupi, F. Longo |
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| Rok vydání: | 1994 |
| Předmět: |
Materials science
Dopant Mechanical Engineering Doping Crystal growth Condensed Matter Physics Crystallographic defect Acceptor law.invention chemistry.chemical_compound Crystallography Electron diffraction chemistry Mechanics of Materials law Indium phosphide General Materials Science Electron microscope |
| Zdroj: | Materials Science and Engineering: B. 28:120-125 |
| ISSN: | 0921-5107 |
| DOI: | 10.1016/0921-5107(94)90029-9 |
| Popis: | A structural characterization of liquid encapsulated Czochralski InP heavily doped with Zn is presented. At a hole density as high as 3.0 × 10 18 cm −3 , corresponding to a Zn content of 1019 atoms cm−3, the crystals are dislocation-free. They contain, however, a high density ( ca. 7 × 10 9 cm −3 ) of precipitates identified as Zn3P2 by electron diffraction. This supports the model in which Zn in excess of that occupying In sites as electrically active acceptor can react with the group V element to form precipitates. Other possible lattice locations of the excess Zn cannot be checked by our techniques. The Zn3P2 precipitates tend to disappear for a hole concentration of 2.6 × 10 18 cm −3 , but dislocations are generated since the hardening effect associated with dopant atoms decreases. The majority of the dislocations have climbed, leaving behind a local high density of microdefects. The possible mechanisms for the generation of these microdefects are discussed. |
| Databáze: | OpenAIRE |
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