The growth of GaN on lithium gallate (LiGaO2) substrates for material integration

Autor:	April S. Brown, W. Alan Doolittle, Zhong Lin Wang, Jeng-Jung Shen, Z. R. Dai, Sangbeom Kang
Rok vydání:	2000
Předmět:	Materials science Solid-state physics business.industry chemistry.chemical_element Nanotechnology Substrate (electronics) Gallate Condensed Matter Physics Electronic Optical and Magnetic Materials Semiconductor chemistry Materials Chemistry Lithium Electrical and Electronic Engineering business
Zdroj:	Journal of Electronic Materials. 29:894-896
ISSN:	1543-186X 0361-5235
DOI:	10.1007/s11664-000-0176-3
Popis:	Compliant substrates offer a new approach for strain management in semiconductors. Various implementations and processes for achieving substrate compliancy have been proposed and demonstrated. These include the use of twist-, glass-, and metal-bonds. A recent focus in our work has been on the growth of GaN on a novel and easily removable substrate—lithium gallate—for the ultimate regrowth on a bonded GaN template. The bonding technology is important to reduce thermal stresses during the regrowth step. Herein, we focus on the understanding of the growth of GaN on lithium gallate.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::bd651e5e55f7fc0ed21a0641f41d413c https://doi.org/10.1007/s11664-000-0176-3 Zobrazit plný text záznamu Full text from SpringerLink